Receiver & preamplifier, fibre optic
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2006.0151.001
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- OBJECT TYPE
- semiconductor photodiode/PIN/10Gbps
- DATE
- 2000
- ARTIFACT NUMBER
- 2006.0151.001
- MANUFACTURER
- Nortel Networks
- MODEL
- NT8L73PA
- LOCATION
- Paignton, England
More Information
General Information
- Serial #
- N/A
- Part Number
- 1
- Total Parts
- 2
- AKA
- N/A
- Patents
- N/A
- General Description
- Ferrous metal casing/ Metal wiring and parts/ Synthetic connector, wire covering and parts
Dimensions
Note: These reflect the general size for storage and are not necessarily representative of the object's true dimensions.
- Length
- 4.0 cm
- Width
- 3.7 cm
- Height
- 1.4 cm
- Thickness
- N/A
- Weight
- N/A
- Diameter
- N/A
- Volume
- N/A
Lexicon
- Group
- Communications
- Category
- Telephony
- Sub-Category
- N/A
Manufacturer
- AKA
- Nortel
- Country
- England
- State/Province
- Unknown
- City
- Paignton
Context
- Country
- Worldwide
- State/Province
- Unknown
- Period
- circa 2000 +
- Canada
-
Designed at Nortel optical lab at 3500 Carling Ave., Ottawa in 1992-1993, this fibre optic device went into production at Nortel's Paignton, UK facility in 1994. Nortel was the first optical equipment vendor to introduce optical transmitters and receivers able to operate at 10 Gbps, the OC192 industry standard for fibre optic networks. As a result, Nortel enjoyed market dominance in these products for the rest of the decade. During its peak production years, 1998-2000, Nortel was producing 300,000 units annually, selling each for about $3,000. An extremely reliable device, at one time approximately one million NT8L73Ps were in operation in the field. They were a major component in the expansion of high capacity fibre networks worldwide in the 1990s. - Function
-
A device used to detect an incoming optical signal, convert it to an electrical signal and amplify the output in a fibre optic network. - Technical
-
The NT8L73PA contains two integrated circuits, or chips, a PIN diode detector made of Indium phosphide (InP) and an amplifier made of gallium arsenide (GaAs). A PIN diode is a semiconductor device consisting of a P (positively charged) layer and an N (negatively charged) layer separated by an I (intrinsic) layer. - Area Notes
-
Unknown
Details
- Markings
- None
- Missing
- Unknown
- Finish
- Gold coloured casing/ Yellow wire covering with black joiner/ Blue and white connector
- Decoration
- N/A
CITE THIS OBJECT
If you choose to share our information about this collection object, please cite:
Nortel Networks, Receiver & preamplifier, fibre optic, circa 2000, Artifact no. 2006.0151, Ingenium – Canada’s Museums of Science and Innovation, http://collection.ingeniumcanada.org/en/item/2006.0151.001/
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